马远骁

准聘教授/博导

院长助理

办公电话：010-6891xxxx

电子邮件：yxma@bit.edu.cn

办公地点：4号教学楼

所在学科

集成电路科学与工程

电子科学与技术

研究方向

（超）宽带隙氧化物半导体、功率器件与集成应用

高k栅控氧化物器件

氧化物忆阻器（memristor）与选通管（selector）

半导体器件EDA设计

教育工作经历

2022/1-至今，北京理工大学，集成电路与电子学院，准聘教授/博导

2020/1-2021/12，北京理工大学，信息与电子学院，助理教授/副研究员

2015/09-2019/08，香港大学，电机电子工程系，博士

2013/09-2015/06, 诺丁汉大学（英国）, 电力电子工程系, 硕士（一等学位）（本博连读，北航选拔公派）

2010.09-2015.06，北京航空航天大学，电子信息工程学院，本科

部分代表性论著

(1)     Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “High-k Gated Ga₂O₃/IGZO Heterostructure TFTs with 70.9 mV/dec Subthreshold Swing Fabricated at A Low Thermal Budget of 200 ℃”, IEEE Electron Device Letters, Accepted, 2025.

(2)     De Dai, Yuan Xiao Ma,* Yeliang Wang,* et al. “Demonstration of Enhancement-Mode High-k Gated Field-Effect Transistors with a Novel Ultrawide Bandgap Semiconductor: Germanium Oxide”, APL Materials, 13, 071107, 1 July 2025.

(3)     Han Yang, Yiyun Zhang,* Yuan Xiao Ma,* Yeliang Wang,* et al. “Enhanced Responsivity of Pd Nanoparticles Decorated β-Ga₂O₃ Photodiodes via Localized Surface Plasmon Resonance”, Physica Status Solidi (RRL) - Rapid Research Letters, 2500105, 2025.

(4)     Shu Ming Qi, Yuan Xiao Ma,* Yeliang Wang,* et al. “Integrated Opto-Synaptic IGZO Transistors for Image Recognition Fabricated at Room Temperature”, ACS Photonics, vol. 12, no.4 , 1760-1770, April 5 2025.

(5)     Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “High-performance Sn-doped Ga2O3 FETs by co-sputtering: Depletion mode versus enhancement mode”, Materials Science in Semiconductor Processing, vol. 194, no. 109552, 1 August 2025.

(6)     Han Yang, Yiyun Zhang,* Yuan Xiao Ma,* Yeliang Wang,* et al. “High responsivity β-Ga2O3 Schottky photodiodes on off-axis sapphire substrate”, Journal of Alloys and Compounds, vol. 1020, 179391, March 2025.

(7)     Heng Yue Gong, Yuan Xiao Ma,* Yeliang Wang,* et al. “93.6 cm² V^-1·s^-1 Homostructure a-IGZO Thin-Film Transistor with High-k Gate Dielectric Fabricated at Room Temperature”, IEEE EDTM, March, 2025.

(8)     Zi Chun Liu, Hui Xia Yang,* Yuan Xiao Ma,* Yeliang Wang,* et al. “High-performance InGaZnO/Ga₂O₃ heterostructure TFTs Gated by high-k Ta_1.0La_0.4O_3.8 fabricated at room temperature”, Applied Surface Science, vol. 685, 161997, March 2025.

(9)     Jia Cheng Li, Yuan Xiao Ma,* Yeliang Wang,* et al., “Room-Temperature-Integrated Flexible Diffusive Oxide Memristors for Artificial Nociceptive Systems”, Advanced Functional Materials, vol. 35, issue 10, 2416635, 8 Dec 2024.

(10)  Jia Cheng Li, Hui Xia Yang,* Yuan Xiao Ma,* Yeliang Wang,* et al., “Dual-modes HfLaOx-based memristor with InSe passivation layer”, Applied Surface Science, vol. 682, 161630, 2025 February.

(11)  Jia Cheng Li, Yuan Xiao Ma,* Yeliang Wang,* et al., “Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device”, IEEE Electron Device Letters, vol. 45, no. 11, pp. 2106-2109, 2024 September.

(12)  Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “Ultrathin Sn-doped Ga₂O₃ for Power Field-Effect Transistors: Si-compatible 4-inch array with high-k gate dielectric”, Science Bulletin, vol. 69, no. 12, pp. 1848-1851, 30 June 2024.

(13)  Han Yang, Yuan Xiao Ma,* Yeliang Wang,* et al. “Sn-doped β-Ga₂O₃ thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source”, Physica Scripta, vol.99, no.6, 5417, May 2024.

(14)  Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “4-inch Gallium Oxide FETs Array with High-k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition”, Physica Status Solidi (RRL) - Rapid Research Letters, vol. 18, no. 8, 2400046, 2024.

(15)  Jia Cheng Li, Yuan Xiao Ma,* Yeliang Wang,* et al. “1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature”, ACS Applied Materials & Interfaces, 16, 14, 17766–17777, 27 March, 2024.

(16)  Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai, “Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics”, Journal of Vacuum Science & Technology B, 41, 2023. (Featured)

(17)  An Huang, Yuan Xiao Ma*, Yeliang Wang, * et al., “Room-temperature-processed synaptic a-IGZO TFT with high-k HfLaO gate dielectric as neuromodulator”, Semiconductor Science and Technology, 38, 115003, 2023.

(18)  Y. X. Ma, H. Su, W. M. Tang*, and P. T. Lai*, “Plasmon-phonon resonance at gate-electrode gate-dielectric interface on carrier mobility or organic TFTs with high-k gate dielectrics”, Applied Surface Science, vol. 565, 150374, 15 June 2021.

(19)  Y. X. Ma, C. Y. Han, W. M. Tang*, and P. T. Lai*,“Reduced Screening of Remote Phonon Scattering in Thin-Film Transistors Caused by Gate-Electrode/Gate-Dielectric Interlayer”, Applied Physics Letters, 117, 14，2020.

(20)  Yuan Xiao Ma, Hui Su, Wing Man Tang* and Pui To Lai*, “Gate Screening on Remote Phonon Scattering for Pentacene Organic TFTs: Holes versus Electrons”, IEEE Electron Device Letters, 40, 893-896, April 2019.

(21)  Yuan Xiao Ma, Wing Man Tang* and Pui To Lai*, “Effects of a Gate-Electrode/Gate-Dielectric Interlayer on Carrier Mobility for Pentacene Organic Thin-Film Transistors”, IEEE Electron Device Letters, 39, 1516-1519, August 2018.

(22)  Yuan Xiao Ma, Chuan Yu Han, Wing Man Tang and Pui To Lai*, “Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors”, IEEE Electron Device Letters, 39, 963-966, May 2018.

(23)  Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai*,“High-Performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric”, Applied Physics Letters, 111, 3501-3505, July 2017.

研究成果

入选国家级海外高层次青年人才，国家重点研发计划青年首席科学家，北京市青年人才托举工程等。分别在北京航空航天大学、英国诺丁汉大学、香港大学取得本科、硕士（一等）、博士学位，具有电子信息工程、电子通信工程和微电子学的交叉专业背景；主要从事氧化物半导体及高k栅控器件与集成应用，以独立一作或通讯作者（学生独一）在包括Science Bulletin, IEEE EDL, IEEE EDTM, Adv. Fun. Mate., APL, ACS Photonics, ACS AMI等期刊和会议上发表论文30余篇，以唯一或第一完成人获得华为“火花奖”、Wiley高贡献作者奖、北京市“千人进千企”特派员、“2024沪嘉产学科技转化项目”、第50届日内瓦国家发明展银奖等荣誉奖励。讲授《电路分析基础》本科专业基础课程。

主持课题

主持包括国家重点研发项目（青年科学家）、国家级青年人才项目、国家自然科学基金青年项目、“北京市青托”等纵向项目7项；另外作为主要参与人参与香港UGC科研项目3项。

荣获奖项

国家重点研发计划青年首席科学家

国家级海外高层次青年人才

“北京市青年人才托举工程”

北京市“千人进千企”特派员（1/1）

第50届日内瓦国家发明展银奖（1/10）

华为“火花奖”（1/1）

Wiley高贡献作者奖（1/1）

High Flier Award, The University of Nottingham (UK)（1/1）

北京航空航天大学优秀毕业生

学术兼职

2025 IEEE EDSSC会议TPC、Session Chair，JLPEA期刊客座编辑，AFM、IEEE EDL、APL、JPCL 、ACS等期刊审稿人。